Displacement damage effects from protons, neutrons, and electrons in semiconductors and optical components.
This category covers non-ionizing energy loss (NIEL), displacement damage dose (DDD), and their effects on device performance in the space radiation environment. Topics include NIEL scaling and its limitations, proton energy selection for DD testing, 1 MeV neutron equivalent fluence calculations, and characterization of DD-sensitive technologies such as optocouplers, photodetectors, solar cells, CCDs, laser diodes, and fiber optics. Discussions of proton test facilities, damage factors, annealing kinetics, and the interplay between DD and TID are all welcome.
If you’re working with DD-sensitive components or trying to understand when NIEL scaling applies (and when it doesn’t), this is the place to discuss it.